Jie Xiang represents tech startups and some of world's leading tech companies and academic institutions to secure intellectual property rights worldwide. Jie’s practice focuses on patent prosecution and IP strategy. He also advises clients with pre-litigation invalidity and infringement analyses, inter partes review (IPR) proceedings before the Patent Trial and Appeal Board (PTAB), as well as matters before the federal courts and the International Trade Commission (ITC).

Jie has represented companies in patent matters in areas such as semiconductors, nanotechnology, MEMS/NEMS, integrated photonics, image processing, wireless communication (5G, Wi-Fi 6), biomedical and consumer wearable devices. He brings impressive scientific credentials in electrical engineering and materials science from 13 years of academic research experience at Harvard, Caltech, and UC San Diego.  

Jie has published extensively in the technical literature, and has a total citation of 9,000 times with H-index of 25. He edited the first book dedicated to semiconductor nanowires, and his work on Ge/Si heterostructure transistors is recognized by Google Scholar as the most highly-cited “Classic Paper,” in the area of Microelectronics & Electronic Packaging.

Jie is a regular reviewer for various scientific publications including: Science, Nano Letters, ACS Nano, Nanoscale, IEEE Electron Device Letters, IEEE Trans. Electron Devices, IEEE Trans. Nanotechnology, Applied Physics Letters, MRS Proceedings, J. Colloid and Interface Science, J. Chemical Physics.

He served on the ad-hoc grant review panel for NSF ECCS and DMR for 2 years, as external grant reviewer for Research Grants Council, Hong Kong for 5 years and as grant reviewer for the Netherlands Foundation for Fundamental Research on Matter (FOM).


  • Hellman Fellowship – Hellman Fellows Fund
  • NSF CAREER Award – National Science Foundation
  • Kavli Nanoscience Institute Prize Postdoctoral Fellowship
  • MRS Graduate Student Gold Award – Materials Research Society
  • Robert Karplus Prize Fellowship in Chemical Physics – Harvard Dept. of Chemistry and Chemical Biology


Scientific Publications

Wei Lu, Jie Xiang, “Semiconductor Nanowires: From Next-Generation Electronics to Sustainable Energy” Royal Society of Chemistry, 2015. ISBN: 978-1-84973-815-6.

Jie Xiang, Ji Hun Kim and Wei Lu "High Performance, Low Power Nanowire Transistor Devices", Chapter 2, Semiconductor Nanowires: From Next-Generation Electronics to Sustainable Energy, 2015, 54-110 DOI:10.1039/9781782625209-00054 Journal Publications.

Y. Wu, J. Xiang, C. Yang, W. Lu, and C.M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature. Vol. 430 (2004), pp. 61-65.

D.C. Bell, Y. Wu, C.J. Barrelet, S. Gradečak, J. Xiang, B.P. Timko, and C.M. Lieber, “Imaging and analysis of nanowires,” Microscopy Research and Technique, Vol. 64 (2004), pp. 373-389. (Review article)

W. Lu, J. Xiang, B.P. Timko, Y. Wu, and C.M. Lieber, “One-dimensional hole gas in germanium/silicon nanowire heterostructures,” Proceedings of the National Academy of Sciences of USA, Vol. 102 (2005), pp. 10046-10051.

J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C.M. Lieber, “Ge/Si nanowire heterostructures as high-performance field-effect transistors,” Nature, Vol. 441 (2006), pp. 489-492. (Named by Google as one of its Classic Papers)

Y. Li, J. Xiang, F. Qian, S. Gradečak, Y. Wu, H. Yan, D.A. Blom, and C.M. Lieber, “Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors,” Nano Letters, Vol. 6 (2006), pp. 1468-1473.

Y. Li, F. Qian, J. Xiang, and C.M. Lieber, “Nanowire electronic and optoelectronic devices,” Materials Today, Vol. 9 (2006), pp. 18-27. (Invited review article)

J. Xiang, A. Vidan, M. Tinkham, R.M. Westervelt, and C.M. Lieber, “Ge/Si nanowire mesoscopic Josephson junctions,” Nature Nanotechnology, Vol.1 (2006), pp. 208-213.

G. Liang, J. Xiang, N. Kharche, G. Klimeck, C.M. Lieber, and M. Lundstrom, “Performance analysis of a Ge/Si core/shell nanowire field-effect transistor,” Nano Letters, Vol. 7 (2007), pp. 642-646.

Y. Hu, H.O.H. Churchill, D.J. Reilly, J. Xiang, C.M. Lieber, and C.M. Marcus, “A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor,” Nature Nanotechnology, Vol. 2 (2007), pp. 622-625.

Y. Hu, J. Xiang, G. Liang, H. Yan, and C.M. Lieber, “Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed,” Nano Letters, Vol. 8 (2008), pp. 925-930.

A. F. Roddaro, P. Brusheim, C. Fasth, H.Q. Xu, L. Samuelson, J. Xiang, and C.M. Lieber, "Spin States of Holes in Ge/Si Nanowire Quantum Dots," Physical Review Letters, Vol. 101 (2008), pp. 186802-1 - 186802-4.

H.P. Chen, V.C. Lee, A. Ohoka, J. Xiang, and Y. Taur, “Modeling and Design of Ferroelectric MOSFETs”, IEEE Transactions on Electron Devices, Vol. 58, No. 8 (2011), pp. 2401-2405.

X. Jiang, B. Tian, J. Xiang, F. Qian, G. Zheng, H.T. Wang, L.Q. Mai and C. M. Lieber, “Rational growth of branched nanowire heterostructures with synthetically encoded properties and function”, Proceedings of the National Academy of Sciences of USA, Vol. 108, No. 30 (July 26, 2011), pp. 12212–12216.

M.C. Wingert, Z.C.Y. Chen, E. Dechaumphai, J. Moon, J-H. Kim, J. Xiang, and R. Chen, “Thermal Conductivity of Ge and Ge–Si Core–Shell Nanowires in the Phonon Confinement Regime,” Nano Letters., Vol. 11, No. 12, (November 23, 2011), pp. 5507–5513.

M.C. Wingert, Z.C.Y. Chen, S. Kwon, J. Xiang, and R. Chen, “Ultra-sensitive thermal conductance measurement of one-dimensional nanostructures enhanced by differential bridge,” AIP, Review of Scientific Instruments, Vol. 83, No. 2 (February 9, 2012), pp. 024901-1 - 024901-7.

S. Kwon, Z.C.Y. Chen, J-H. Kim, and J. Xiang, "Misfit-Guided Self-Organization of Anticorrelated Ge Quantum Dot Arrays on Si Nanowires," Nano Letters, Vol. 12, No. 9 (August 13, 2012), pp. 4757-4762.

J. Moon, J-H. Kim, Z.C.Y. Chen, J. Xiang, and R. Chen,”Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires,” Nano Letters, Vol. 13, No. 3 (February 8, 2013), pp. 1196–1202.

Z. Li, T. Lavergne, D.A. Malyshev, J. Zimmermann, R. Adhikary, K. Dhami, P. Ordoukhanian, Z. Sun, J. Xiang, and F.E. Romesberg, “Site-specifically arraying small molecules or proteins on DNA using an expanded genetic alphabet,” Chemistry, An European Journal, Vol. 19, No. 42, (October 11, 2013), pp. 14205-14209.

Ji Hun Kim, Zack C.Y. Chen, Soonshin Kwon and Jie Xiang, “Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold Slope”. Nano Letters, Vol. 14, No. 3 (February 25, 2014), pp. 1687-1691.

Soonshin Kwon, Zack C.Y. Chen, Hyunwoo Noh, Ju Hun Lee, Jennifer Cha and Jie Xiang, “Selective Functionalization and Loading of Biomolecules in Crystalline Silicon Nanotube Field-Effect-Transistors”. Nanoscale, Vol 6, (May 13, 2014), pp. 7847-7852.

Zhelin Sun, Deli Wang, Jie Xiang, “Self-Bridging of Vertical Silicon Nanowires and a Universal Capacitive Force Model for Spontaneous Attraction in Nanostructures”. ACS Nano, Vol 8, (Oct 19, 2014), pp. 11261-11267.

Matthew C. Wingert, Soonshin Kwon, Ming Hu, Dimos Poulikakos, Jie Xiang and Renkun Chen, “Sub-Amorphous Thermal Conductivity in Ultra-Thin Crystalline Silicon Nanotubes”. Nano Letters, Vol. 15, No. 4 (March 10, 2015), pp. 2605-2611.


Jie was an inventor on a patent for nanowire heterostructures.

He enjoys teaching and has taught introduction to analog design to over a thousand undergraduate students at UCSD ECE with one of the highest ratings.

When not working he is a maker for internet-of-things. His most recent projects include a radar for parking cars in a tight garage and a wireless temperature/humidity sensor on an RF mesh network.
Expand All

Jie Xiang represents tech startups and some of world's leading tech companies and academic institutions to secure intellectual property rights worldwide. Jie’s practice focuses on patent prosecution and IP strategy. He also advises clients with pre-litigation invalidity and infringement analyses, inter partes review (IPR) proceedings before the Patent Trial and Appeal Board (PTAB), as well as matters before the federal courts and the International Trade Commission (ITC).

Jie has represented companies in patent matters in areas such as semiconductors, nanotechnology, MEMS/NEMS, integrated photonics, image processing, wireless communication (5G, Wi-Fi 6), biomedical and consumer wearable devices. He brings impressive scientific credentials in electrical engineering and materials science from 13 years of academic research experience at Harvard, Caltech, and UC San Diego.  

Jie has published extensively in the technical literature, and has a total citation of 9,000 times with H-index of 25. He edited the first book dedicated to semiconductor nanowires, and his work on Ge/Si heterostructure transistors is recognized by Google Scholar as the most highly-cited “Classic Paper,” in the area of Microelectronics & Electronic Packaging.

Jie is a regular reviewer for various scientific publications including: Science, Nano Letters, ACS Nano, Nanoscale, IEEE Electron Device Letters, IEEE Trans. Electron Devices, IEEE Trans. Nanotechnology, Applied Physics Letters, MRS Proceedings, J. Colloid and Interface Science, J. Chemical Physics.

He served on the ad-hoc grant review panel for NSF ECCS and DMR for 2 years, as external grant reviewer for Research Grants Council, Hong Kong for 5 years and as grant reviewer for the Netherlands Foundation for Fundamental Research on Matter (FOM).


  • Hellman Fellowship – Hellman Fellows Fund
  • NSF CAREER Award – National Science Foundation
  • Kavli Nanoscience Institute Prize Postdoctoral Fellowship
  • MRS Graduate Student Gold Award – Materials Research Society
  • Robert Karplus Prize Fellowship in Chemical Physics – Harvard Dept. of Chemistry and Chemical Biology

Scientific Publications

Wei Lu, Jie Xiang, “Semiconductor Nanowires: From Next-Generation Electronics to Sustainable Energy” Royal Society of Chemistry, 2015. ISBN: 978-1-84973-815-6.

Jie Xiang, Ji Hun Kim and Wei Lu "High Performance, Low Power Nanowire Transistor Devices", Chapter 2, Semiconductor Nanowires: From Next-Generation Electronics to Sustainable Energy, 2015, 54-110 DOI:10.1039/9781782625209-00054 Journal Publications.

Y. Wu, J. Xiang, C. Yang, W. Lu, and C.M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature. Vol. 430 (2004), pp. 61-65.

D.C. Bell, Y. Wu, C.J. Barrelet, S. Gradečak, J. Xiang, B.P. Timko, and C.M. Lieber, “Imaging and analysis of nanowires,” Microscopy Research and Technique, Vol. 64 (2004), pp. 373-389. (Review article)

W. Lu, J. Xiang, B.P. Timko, Y. Wu, and C.M. Lieber, “One-dimensional hole gas in germanium/silicon nanowire heterostructures,” Proceedings of the National Academy of Sciences of USA, Vol. 102 (2005), pp. 10046-10051.

J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C.M. Lieber, “Ge/Si nanowire heterostructures as high-performance field-effect transistors,” Nature, Vol. 441 (2006), pp. 489-492. (Named by Google as one of its Classic Papers)

Y. Li, J. Xiang, F. Qian, S. Gradečak, Y. Wu, H. Yan, D.A. Blom, and C.M. Lieber, “Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors,” Nano Letters, Vol. 6 (2006), pp. 1468-1473.

Y. Li, F. Qian, J. Xiang, and C.M. Lieber, “Nanowire electronic and optoelectronic devices,” Materials Today, Vol. 9 (2006), pp. 18-27. (Invited review article)

J. Xiang, A. Vidan, M. Tinkham, R.M. Westervelt, and C.M. Lieber, “Ge/Si nanowire mesoscopic Josephson junctions,” Nature Nanotechnology, Vol.1 (2006), pp. 208-213.

G. Liang, J. Xiang, N. Kharche, G. Klimeck, C.M. Lieber, and M. Lundstrom, “Performance analysis of a Ge/Si core/shell nanowire field-effect transistor,” Nano Letters, Vol. 7 (2007), pp. 642-646.

Y. Hu, H.O.H. Churchill, D.J. Reilly, J. Xiang, C.M. Lieber, and C.M. Marcus, “A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor,” Nature Nanotechnology, Vol. 2 (2007), pp. 622-625.

Y. Hu, J. Xiang, G. Liang, H. Yan, and C.M. Lieber, “Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed,” Nano Letters, Vol. 8 (2008), pp. 925-930.

A. F. Roddaro, P. Brusheim, C. Fasth, H.Q. Xu, L. Samuelson, J. Xiang, and C.M. Lieber, "Spin States of Holes in Ge/Si Nanowire Quantum Dots," Physical Review Letters, Vol. 101 (2008), pp. 186802-1 - 186802-4.

H.P. Chen, V.C. Lee, A. Ohoka, J. Xiang, and Y. Taur, “Modeling and Design of Ferroelectric MOSFETs”, IEEE Transactions on Electron Devices, Vol. 58, No. 8 (2011), pp. 2401-2405.

X. Jiang, B. Tian, J. Xiang, F. Qian, G. Zheng, H.T. Wang, L.Q. Mai and C. M. Lieber, “Rational growth of branched nanowire heterostructures with synthetically encoded properties and function”, Proceedings of the National Academy of Sciences of USA, Vol. 108, No. 30 (July 26, 2011), pp. 12212–12216.

M.C. Wingert, Z.C.Y. Chen, E. Dechaumphai, J. Moon, J-H. Kim, J. Xiang, and R. Chen, “Thermal Conductivity of Ge and Ge–Si Core–Shell Nanowires in the Phonon Confinement Regime,” Nano Letters., Vol. 11, No. 12, (November 23, 2011), pp. 5507–5513.

M.C. Wingert, Z.C.Y. Chen, S. Kwon, J. Xiang, and R. Chen, “Ultra-sensitive thermal conductance measurement of one-dimensional nanostructures enhanced by differential bridge,” AIP, Review of Scientific Instruments, Vol. 83, No. 2 (February 9, 2012), pp. 024901-1 - 024901-7.

S. Kwon, Z.C.Y. Chen, J-H. Kim, and J. Xiang, "Misfit-Guided Self-Organization of Anticorrelated Ge Quantum Dot Arrays on Si Nanowires," Nano Letters, Vol. 12, No. 9 (August 13, 2012), pp. 4757-4762.

J. Moon, J-H. Kim, Z.C.Y. Chen, J. Xiang, and R. Chen,”Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires,” Nano Letters, Vol. 13, No. 3 (February 8, 2013), pp. 1196–1202.

Z. Li, T. Lavergne, D.A. Malyshev, J. Zimmermann, R. Adhikary, K. Dhami, P. Ordoukhanian, Z. Sun, J. Xiang, and F.E. Romesberg, “Site-specifically arraying small molecules or proteins on DNA using an expanded genetic alphabet,” Chemistry, An European Journal, Vol. 19, No. 42, (October 11, 2013), pp. 14205-14209.

Ji Hun Kim, Zack C.Y. Chen, Soonshin Kwon and Jie Xiang, “Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold Slope”. Nano Letters, Vol. 14, No. 3 (February 25, 2014), pp. 1687-1691.

Soonshin Kwon, Zack C.Y. Chen, Hyunwoo Noh, Ju Hun Lee, Jennifer Cha and Jie Xiang, “Selective Functionalization and Loading of Biomolecules in Crystalline Silicon Nanotube Field-Effect-Transistors”. Nanoscale, Vol 6, (May 13, 2014), pp. 7847-7852.

Zhelin Sun, Deli Wang, Jie Xiang, “Self-Bridging of Vertical Silicon Nanowires and a Universal Capacitive Force Model for Spontaneous Attraction in Nanostructures”. ACS Nano, Vol 8, (Oct 19, 2014), pp. 11261-11267.

Matthew C. Wingert, Soonshin Kwon, Ming Hu, Dimos Poulikakos, Jie Xiang and Renkun Chen, “Sub-Amorphous Thermal Conductivity in Ultra-Thin Crystalline Silicon Nanotubes”. Nano Letters, Vol. 15, No. 4 (March 10, 2015), pp. 2605-2611.



Jie was an inventor on a patent for nanowire heterostructures.

He enjoys teaching and has taught introduction to analog design to over a thousand undergraduate students at UCSD ECE with one of the highest ratings.

When not working he is a maker for internet-of-things. His most recent projects include a radar for parking cars in a tight garage and a wireless temperature/humidity sensor on an RF mesh network.